PUBLICATIONS

JOURNALS

1. V. Vadalà, A. Raffo, A. Colzani, M.A. Fumagalli, G. Sivverini, G. Bosi, and G. Vannini, "On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past," in IEEE Transactions on Microwave Theory and Techniques, doi: 10.1109/TMTT.2024.3378597.

2. F. Manni, P. Colantonio, V. Camarchia, A. Piacibello, G. Bosi, V. Vadalà, R. Giofrè, “A Waveform Engineering Approach for Class F Operation in a Class C Biased Peaking Branch of GaN MMIC Doherty Power Amplifiers” Sci Rep 15, 11325 (2025), doi:10.1038/s41598-025-95964-1.

3. K. Kikuchi, A. Raffo, V. Vadalà, G. Bosi, G. Vannini and H. Yamamoto, "A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers," in IEEE Access, vol. 12, pp. 72721-72729, 2024, doi: 10.1109/ACCESS.2024.3403037.

4. Eslam N. Mohamed, Ahmed M. E. Abounemra, M. Darwish, A. M. El-Tager, P. Colantonio, and R. Giofre “High Efficiency MMIC GaN RF Power Amplifier with Improved Linearity in Series-Parallel Configuration” in IEEE Access, doi: 10.1109/ACCESS.2026.3657693.

5. Z. Zhu, G. Bosi, A. Raffo, G. Crupi and J. Cai, "Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach," in IEEE Journal of the Electron Devices Society, vol. 12, pp. 201-210, 2024, doi: 10.1109/JEDS.2024.3364809.

CONFERENCE PROCEEDINGS

1. V. Vadalà, A.Raffo, et al., "GaN Power Bars for Microwave Power: Modeling and Validation," 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026, Boston, MA, USA, 2026.

2. R. Giofrè, A. Raffo, et al., "800 W Efficient GaN SSPA for VHF Space Radar," 2026 IEEE Space Hardware and Radio Conference (SHaRC), Hollywood, CA, USA, 2026, pp. 1-3, doi: 10.1109/SHaRC69499.2026.11408697.

3. G. Bosi, A. Raffo, R. Giofrè, et al., "Rethinking Microwave Power-Bar Characterization," 2025 105th ARFTG Microwave Measurement Conference (ARFTG), San Fransisco, CA, USA, 2025, pp. 1-4, doi: 10.1109/ARFTG65332.2025.11168147.

4. F. Manni, R. Giofrè, A. Raffo, et al., "100W and 80% Efficiency GaN PA for VHF Space-Borne Earth Sensing Applications," 2025 20th European Microwave Integrated Circuits Conference (EuMIC), Utrecht, Netherlands, 2025, pp. 158-161, doi: 10.23919/EuMIC65284.2025.

5. G. Gugliandolo, G. Crupi, V. Vadalà, R. Giofrè, A. Raffo and N. Donato, "A Straightforward Fitting Strategy Based on the Complex Lorentzian Function to Fully and Systematically Characterize the Kink Effect in the Output Reflection Coefficient of the GaN HEMT Technology," 2025 IEEE 12th International Workshop on Metrology for AeroSpace (MetroAeroSpace), Naples, Italy, 2025, pp. 706-710, doi: 10.1109/MetroAeroSpace64938.2025.11114695.

6. F. Manni, R. Giofre, V. Camarchia, A. Piacibello, F. Giannini and P. Colantonio, "A GaN-Based MMIC Doherty Power Amplifier with Class F Peaking Branch," 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024, Washington, DC, USA, 2024, pp. 477-480, doi: 10.1109/IMS40175.2024.10600303.

7. N. Choupan et al., "Characterization Procedure for Effective Evaluation of III-V Compound Semiconductor Technology," 2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), Torino, Italy, 2025, pp. 1-4, doi: 10.1109/INMMIC64198.2025.10975315.

8. G. Basaglia et al., "Characterization and Modeling of Dual-Input Doherty Power Amplifier for High Efficiency and Bandwidth," 2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), Torino, Italy, 2025, pp. 1-3, doi: 10.1109/INMMIC64198.2025.10975670.

9. G. Crupi et al., "An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713595.